(RTTNews) - Marvell Technology, Inc. (MRVL), a leader in data infrastructure semiconductor solutions, has launched the industry's first 2nm custom Static Random Access Memory - SRAM. This innovation ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...

A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...

RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...

IBM Research has been working on new non-volatile magnetic memory for over two decades. Non-volatile memory is wonderful for retaining data without power, but it is extremely slow, and does not last ...

In this post, we are going to explain the differences between SRAM and DRAM. These are types of RAM (Random Access Memory) which is an internal memory of a computer. Now, if you are curious about ...