采用0.18μm BCD工艺设计了NPNE-SCR器件,其在高压辐射环境中表现出优异的ESD防护特性,击穿电压显著高于传统SCR和NPN-SCR,浅snapback电压仅2.8V(39.0V),300krad(Si) TID辐照后仍保持低漏电流和稳定ESD性能,适用于太空高电压芯片保护。 摘要: 基于0.18微米的双极CMOS-DMOS ...
Electrostatic discharge (ESD) protection remains a critical facet in the design and fabrication of CMOS integrated circuits. With the continuing downscaling of device dimensions and the increasing ...
KAWASAKI, Japan &#151 NEC Electronics Inc. has developed a new electrostatic discharge (ESD) technology for the 45-nm node. The technology utilizes a silicon controlled rectifier (SCR) design to ...
As the popularity of portable electronics, “smart devices”, and automotive electronics keeps increasing, so does the need for analog functions to be embedded in ICs. This drives the demand for ...